Weeks

Broad Topic

Concepts

1-2

Basics of diodes

Diode models, Breakdown and Zener diodes, circuit applications of diodes.

2-3

Semiconductor physics and p-n junctions

Semiconductors, electrons and holes, doping of semiconductors, drift and diffusion, the p-n junction, another look at the diode models

4-7

Bipolar junction transistors (BJTs)

Basic structure and physics, modes of operation, npn and pnp transistors, i-v characteristics, BJT as an amplifier and as a switch, small and large signal models

8-10

Field effect transistors (FETs)

Enhancement- and depletion-type MOSFETs, basic structure and physics, i-v characteristics, FET as an amplifier and as a switch, digital logic based on FETs, integrated circuits

11-12

Differential amplifiers

FET differential pair, differential amplifiers with active loads

Lecture

Main Concepts

Sections in Sedra and Smith

1

Ideal diodes and analysis of diode circuits

3.1

2

Ideal diodes and the forward characteristics of real diodes

3.2 to 3.3

3

Diode reverse breakdown characteristics, Zener diodes

3.4

4

Diode rectifier circuits and application to DC power supplies

3.5 and 3.9

5

Basic semiconductor concepts – electrons and holes, energy gap, electron-hole-pair generation

3.7.1

6

Holes, recombination, intrinsic carrier concentration

3.7.1

7

Conduction in semiconductors – drift and diffusion

3.7.1

8

Doped semiconductors, the mass-action law

3.7.1

9

The open-circuit pn junction

3.7.2

10

The reverse-biased pn junction, depletion capacitance, breakdown in the pn junction

3.7.3-3.7.4

11

The forward-biased pn junction

3.7.5

12

Diode ideality factor, relationship between bandgap and cut-in voltage, short diodes, diffusion capacitance, dynamic diode resistance

3.7.5, 3.3.8

13

Linearity and superposition review, diode small signal model

3.3.8

14

Introduction to the BJT, forward active mode of the BJT

5.1.1-5.1.2

15

Forward active mode current relationships, beta and alpha, large signal models for the forward active mode

5.1.2

16

Reverse active mode, Ebers-Moll (EM) model, saturation mode

5.1.3-5.1.5

17

BJT circuit symbols, graphical representations of transistor characteristics, the Early effect

5.2.1-5.2.2

18

Large- and small-signal common emitter current gain, BJT data sheets, BJT breakdown, the Early effect in common-emitter characteristics

5.2.3-5.2.4

19

Common-emitter amplifier, skeleton circuit and basic concepts

5.3.1-5.3.2

20

Graphical analysis of common emitter amplifier, classical biasing arrangmenet for BJT amplifiers

5.3.3, 5.5.1

21

Biasing of BJT amps, small signal model for BJT

5.5.2-5.5.4, 5.6

22

Single-stage BJT amplifiers

5.7

23

Common emitter amp, common base amp, voltage buffer amps

5.7, 1.5, 2.3.4

24

Common collector amp, summary of BJT amps

5.7

25

MOSFET introduction, n-channel enhancement MOSFET

4.1.1-4.1.5

26

MOSFET i-v characteristics and large signal model

4.1.6, 4.2.1-2

27

Channel length modulation, p-channel enhancement MOSFET, CMOS, MOSFET as an amplifier and switch

4.2.3-4, 4.1.7-8, 4.3, 4.4.1-3

28

MOSFET as an amplifier, biasing MOSFET amplifier circuits

4.4.5-6, 4.5

29

MOSFET small signal models, single-stage MOSFET amps

4.6, 4.7.1

30

Digital logic inverters, CMOS digital logic inverter

1.7.1-5, 4.10

31

Difference amplifiers, MOS differential pair amp large signal properties

2.4, 7.1

32

Small signal analysis of MOSFET diff pair amp, non-idealities

7.2

Item

Weight

Date

Problem sets

10%

Design lab:

15%

Examination #1:

25%

TBA

Examination #2:

25%

TBA

Examination #3:

25%

TBA

Total:

100%